Beilstein J. Nanotechnol.2013,4, 726–731, doi:10.3762/bjnano.4.82
; siliconcarbide (SiCx); surface passivation; Introduction
Surface passivation has become a relevant issue in high efficiency crystalline silicon (c-Si) solar cells. The importance is even increasing as thinner wafers are used to reduce the cost for photovoltaic applications [1]. Aluminum oxide (Al2O3
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Figure 1:
Surface recombination velocity, Seff,max [cm/s]. (a) and (b)Seff,max for randomly textured and pol...